Unit conditions vceosus collectoremitter sustaing voltage 60 v ic200ma, ib0 vcersus collectoremitter sustaing voltage 70 v ic200ma, rbe100. C absolute maximum rating ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 30 v collectoremitter voltage vceo 15 v emitterbase voltage vebo 5 v collector current ic 50 ma collector power. Internal schematic diagram october1995 absolute maximum ratings symbol parameter. No licence is granted for the use of it other than for information purposes in connection with the products to which it. Toshiba transistor silicon pnp epitaxial type pct process. Silicon npn transistor sgsthomsonpreferred salestype description the 2n3055 is a silicon epitaxialbase npn transistor in jedecto3 metalcase.
Npn silicon transistor pin connection descriptions switching application interface circuit and driver circuit application features with builtin bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density ordering information type. Fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. Nov 07, 2016 c4793 datasheet pdf npn transisotor toshiba, 2sc4793 datasheet, c4793 pdf, c4793 pinout, c4793 data, circuit, c4793 output, ic, schematic, substitute. Semiconductor data sheets andor specifications can and do vary in different. Njsemi, alldatasheet, datasheet, datasheet search site for electronic components and. The 2n1711 is also used to advantage in amplifiers where low noise is an important factor. Pinning pin description 1 emitter 2 base 3 collector, connected to case fig. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit. Get same day shipping, find new products every month, and feel confident with our low price guarantee. It is the maximum collector base voltage again it is generally measured with the emitter left open circuit. General purpose plastic rectifier 1n4001 thru 1n4007 vishay. Npn silicon transistor pin connection descriptions switching application interface circuit and driver circuit application features with builtin bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density ordering information type no.
This data sheet provides information on subminiature size, axial lead mounted rectifiers for general. Silicon npn transistor, 2n5928 datasheet, 2n5928 circuit, 2n5928 data sheet. In a transistor a very small current input signal flowing emitter tobase is able to control a much larger current which flows from the system power. C5928 datasheet, c5928 pdf, c5928 data sheet, c5928 manual, c5928 pdf, c5928, datenblatt, electronics c5928, alldatasheet, free, datasheet, datasheets, data sheet. Ericsson rbs 6102 asea hafo ab gm378 transistor b0243c kt606 ericsson spo 1410 semicon indexes transistor 8bb smd trnec tokin 0d 108 text. Semiconductor reserves the right to make changes at any time without notice in order to improve design. The transistor is a semiconductor device than can function as a signal amplifier or as a solid state switch. In the previous tutorial we saw that the standard bipolar transistor or bjt, comes in two basic forms. Nei transistor npn il terminale collettore va sempre collegato alla tensione positiva di alimentazione vedi fig. Savantic semiconductor product specification silicon npn power transistors 2sc4242 description with to220c package high voltage,high speed applications for use in high voltage,high speed. Silicon pnp transistors the utc 2n2955 is a silicon pnp transistor in to3 metal case. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. The humble transistor q1 emitter e collector c base b transistor basics emitter to base junction is forward biased normally collector to base junction is reverse biased normally transistors are current operated devices, so.
The terminal on the left is called the emitter, the terminal on the right is. We also learnt that the junctions of the bipolar transistor can be biased in one of three different ways. Epitaxial planar npn description the 2n1711 is a silicon planar epitaxial npn transistor in jedec to39 metal case. Silicon offers good overall performance with a base emitter junction turn on voltage of around 0. C3150 datasheet pdf 800v, npn power transistor mospec, 2sc3150 datasheet, c3150 pdf, c3150 pinout, c3150 equivalent, data, circuit, c3150 schematic.
Jan 19, 2014 reverse current vs reverse voltage 1n4001 1n4007, rev. Vce limits of the transistor that must be observed for reliable operation. Diode schematic symbol and actual picture of a common 1n914 diode the black stripe in the picture is the cathode. Transistor specifications explained electronics notes. C 1n4001 1n4007 general purpose rectifiers glass passivated 3. Wide aso safe operating area applications 800v3a switching regulator applications pinning pin. Obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. B pc tj tstg silicon pnp e pitax ial type unit in mm r 10 0. Microsemi corporation, a wholly owned subsidiary of microchip technology inc. Npn triple diffused planar silicon transistor, c5928 pdf download sanyo panasonic, c5928 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits.
A silicon npn transistor in a to39 type case designed primarily for amplifier and switching applications. Njsemi, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. It is intented for use in high performance amplifier, oscillator and switching circuits. C3150 datasheet pdf 800v, npn power transistor mospec. Max unit vceosus collectoremitter sustaining voltage i c0. Silicon npn epitaxial planer transistor, un1211 datasheet, un1211 circuit, un1211 data sheet. Toshiba to s h ib a transistor 2sa1930 power am plifier applicatio ns 2sa1930 symbol v cbo v ceo ve b o ic. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Hence comparing the schematic symbol to the pn junction in figure 4, we see the anode is the ptype semiconductor and the cathode is the ntype semiconductor.
Ordering information note 4 device packaging shipping. Nchannel 30v d s mosfet features ultra low onresistance using high density trenchfet gen ii power mosfet technology q g optimized 100 % rg tested applications synchronous buck lowside notebook server workstation synchronous rectifier, pol product summary vds v rdson. Pdf barcelona28, s171 ch5400 t110 94v 0 ptc sy 16p 2n2955t philips diode ph 37m 35k0 trimble r8 model 2 2sc497 2sa749 2n6259 ssi 2n4948 njs. A typical switching circuit using a pnp transistor is shown at the left. C3271 datasheet, c3271 pdf, c3271 data sheet, datasheet, data sheet, pdf. Preliminary datasheet r07ds0432ej0300 2sc12ak previous. Product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Panasonic, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Transistor amplifiers transistor has 3 legs, one of them is usually grounded.
Emitter, collector and base in its essence, a transistor consists of two diodes arranged back to back. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The 2n3055 is a silicon npn power transistor intended for general purpose applications. It was introduced in the early 1960s by rca using a hometaxial power transistor process, transitioned to an epitaxial base in the mid1970s. Npn transistor tutorial the bipolar npn transistor. An npn n egative p ositive n egative type and a pnp the most commonly used transistor configuration is the npn transistor.
The schematic representation of a transistor is shown to the left. This parameter is the collector to base breakdown voltage of a bipolar transistor. C4793 datasheet pdf npn transisotor toshiba, 2sc4793 datasheet, c4793 pdf, c4793 pinout, c4793 data, circuit, c4793 output, ic, schematic, substitute. Savantic semiconductor product specification 2 silicon npn power transistors 2sc4242 characteristics tj25 unless otherwise specified symbol parameter conditions min typ. Savantic semiconductor product specification silicon npn power transistors 2sc3150 description with to220c package high breakdown voltage.
Page 2 of 4 electrical characteristics t ambient25. Base collector emitter q1 2n3904 a transistor is basically a current amplifier. The configuration shown above is called an npn transistor. The circuit schematic symbol of a diode is shown in figure 5. Toshiba transistor silicon pnp epitaxial type pct process 2sc1959 audio frequency low power amplifier applications driver stage amplifier applications switching applications excellent hfe linearity. Ib0 400 v vbrcbo collectorbase breakdown voltage ic1ma. Free packages are available maximum ratings rating symbol value unit collector.
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